Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter; in SMT and as Reverse Gullwing Lead (Pb) Free Product - RoHS Compliant BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)
BPW 34 FA
BPW 34 FAS
BPW 34 FAS (R18R)
Wesentliche Merkmale
Features
• Speziell geeignet für den Wellenlängenbereich von 830 nm bis 880 nm • Kurze Schaltzeit (typ. 20 ns) • DIL-Plastikbauform mit hoher Packungsdichte • BPW 34 FAS/(R18R): geeignet für Vapor-Phase Löten und IR-Reflow Löten
• Especially suitable for the wavelength range of 830 nm to 880 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density • BPW 34 FAS/(R18R): Suitable for vapor-phase and IR-reflow soldering
Anwendungen
Applications
• IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Gerätefernsteuerung • Lichtschranken für Gleich- und Wechsellichtbetrieb
• IR-remote control of hi-fi and TV sets, video tape recorders, remote controls of various equipment • Photointerrupters
Typ Type
Bestellnummer Ordering Code
BPW 34 FA
Q62702P1129
BPW 34 FAS
Q65110A3121
BPW 34 FAS (R18R)
Q65110A2699
2005-05-10
1
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Grenzwerte Maximum Ratings Bezeichnung Parameter
Symbol Symbol
Wert Value
Einheit Unit
Betriebs- und Lagertemperatur Operating and storage temperature range
Top; Tstg
– 40 … + 100
°C
Sperrspannung Reverse voltage
VR VR (t < 2 min)
16 32
V V
Verlustleistung, TA = 25 ° C Total power dissipation
Ptot
150
mW
Kennwerte (TA = 25 ° C, λ = 870 nm) Characteristics Bezeichnung Parameter
Symbol Symbol
Wert Value
Einheit Unit
Fotostrom Photocurrent VR = 5 V, Ee = 1 mW/cm2
Ip
50 (≥ 40)
µA
Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity
λ S max
880
nm
Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax
λ
730 … 1100
nm
Bestrahlungsempfindliche Fläche Radiant sensitive area
A
7.00
mm2
Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area
L× B
2.65 × 2.65
mm × mm
L× W
Halbwinkel Half angle
ϕ
± 60
Grad deg.
Dunkelstrom, VR = 10 V Dark current
IR
2 (≤30)
nA
Spektrale Fotoempfindlichkeit Spectral sensitivity
Sλ
0.65
A/W
Quantenausbeute Quantum yield
η
0.93
Electrons Photon
Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage
VO
320 (≥ 250)
mV
2005-05-10
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BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Kennwerte (TA = 25 ° C, λ = 870 nm) Characteristics (cont’d) Bezeichnung Parameter
Symbol Symbol
Wert Value
Einheit Unit
Kurzschlussstrom, Ee = 0.5 mW/cm2 Short-circuit current
ISC
23
µA
Anstiegs- und Abfallzeit des Fotostroms Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA
tr , tf
20
ns
Durchlassspannung, IF = 100 mA, E = 0 Forward voltage
VF
1.3
V
Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance
C0
72
pF
Temperaturkoeffizient von VO Temperature coefficient of VO
TCV
– 2.6
mV/K
Temperaturkoeffizient von ISC Temperature coefficient of ISC
TCI
0.03
%/K
Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V
NEP
3.9 × 10– 14
Nachweisgrenze, VR = 10 V, Detection limit
D*
6.8 × 1012
2005-05-10
3
W -----------Hz cm × Hz --------------------------W
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Photocurrent IP = f (Ee), VR = 5 V Open-Circuit Voltage VO = f (Ee)
Relative Spectral Sensitivity Srel = f (λ) OHF01430
100
ΙP
Srel %
OHF01428
10 3 µA
10 4 mV VO
Total Power Dissipation Ptot = f (TA) OHF00958
160 mW Ptot 140
80
10 2
10 3
70
VO
100
60
10 1
50
10 2
40
120
ΙP
80 60
30
10 0
10 1
-1
0
40
20
20
10
10
0 400
600
800
1000 nm 1200 λ
10 0
10 2
µW/cm 2
10 10 4
Dark Current
Capacitance C = f (VR), f = 1 MHz, E = 0 OHF00080
4000
0
0
20
40
60
Ee
IR = f (VR), E = 0 ΙR
10 1
OHF00081
100 C
pA
80 ˚C 100 TA
Dark Current
IR = f (TA), VR = 10 V, E = 0 OHF00082
10 3
Ι R nA
pF 80
10 2
3000
70 60 2000
10 1
50 40 30
10 0
1000
20 10 0
0
5
10
15
V VR
0 -2 10
20
10 -1
10 0
10 1
V 10 2 VR
Directional Characteristics Srel = f (ϕ) 40
30
20
10
ϕ
0
OHF01402
1.0
50 0.8 60
0.6
70
0.4
80
0.2 0
90
100
1.0
2005-05-10
0.8
0.6
0.4
0
20
40
60
80
4
100
120
10 -1
0
20
40
60
80 ˚C 100 TA
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Maßzeichnung Package Outlines BPW 34 FA
5.4 (0.213)
4.3 (0.169)
Chip position 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075)
3.7 (0.146)
3.5 (0.138) 3.0 (0.118)
1.2 (0.047) 0.7 (0.028)
0.8 (0.031) 0.6 (0.024)
4.9 (0.193) 4.5 (0.177)
0.6 (0.024) 0.4 (0.016)
Cathode marking 4.0 (0.157)
0.6 (0.024)
0.6 (0.024) 0.4 (0.016) 0.4 (0.016) 0.35 (0.014) 0.5 (0.020) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024) 1.8 (0.071) 1.4 (0.055)
0 ... 5˚
5.08 (0.200) spacing
Photosensitive area 2.65 (0.104) x 2.65 (0.104)
GEOY6643
BPW 34 FAS
0.3 (0.012)
6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169)
˚ 0.2 (0.008) 0.1 (0.004)
1.1 (0.043) 0.9 (0.035)
0...5
1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004)
Chip position
0.9 (0.035) 0.7 (0.028)
1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146)
1.8 (0.071) ±0.2 (0.008)
Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104)
GEOY6863
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2005-05-10
5
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)
BPW 34 FAS (R18R)
0...5
˚ 0.2 (0.008) 0.1 (0.004)
1.1 (0.043) 0.9 (0.035)
0.3 (0.012)
1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004)
Chip position
6.7 (0.264) 6.2 (0.244)
1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146)
1.8 (0.071) ±0.2 (0.008)
0.9 (0.035) 0.7 (0.028)
4.5 (0.177) 4.3 (0.169)
Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104)
GEOY6916
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
2005-05-10
6
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Lötbedingungen Soldering Conditions
BPW 34 FAS BPW 34 FAS (R18R)
Vorbehandlung nach JEDEC Level 4 Preconditioning acc. to JEDEC Level 4
IR-Reflow Lötprofil für bleifreies Löten IR Reflow Soldering Profile for lead free soldering
OHLA0687
300
Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile
˚C
T
(nach J-STD-020B) (acc. to J-STD-020B)
255 ˚C 240 ˚C
250
˚C 260 ˚C +0 -5 ˚C 245 ˚C ±5 ˚C ˚C 235 ˚C +5 -0 ˚C
217 ˚C 10 s min
200 30 s max
Ramp Down 6 K/s (max)
150 100 s max
120 s max 100 Ramp Up 3 K/s (max)
50
25 ˚C 0 0
50
100
150
200
250
s
300
t
Wellenlöten (TTW) TTW Soldering
BPW 34 FA
OHLY0598
300 C T
(nach CECC 00802) (acc. to CECC 00802) 10 s
250
Normalkurve standard curve
235 C ... 260 C
Grenzkurven limit curves
2. Welle 2. wave 200 1. Welle 1. wave 150
ca 200 K/s
2 K/s
5 K/s
100 C ... 130 C 100 2 K/s 50
Zwangskühlung forced cooling
0 0
50
100
150
200 t
2005-05-10
7
s
250
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)
Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2005-05-10
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