BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)

Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter; in SMT and as Reverse Gullwin...
Author: Carl Hafner
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Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter; in SMT and as Reverse Gullwing Lead (Pb) Free Product - RoHS Compliant BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)

BPW 34 FA

BPW 34 FAS

BPW 34 FAS (R18R)

Wesentliche Merkmale

Features

• Speziell geeignet für den Wellenlängenbereich von 830 nm bis 880 nm • Kurze Schaltzeit (typ. 20 ns) • DIL-Plastikbauform mit hoher Packungsdichte • BPW 34 FAS/(R18R): geeignet für Vapor-Phase Löten und IR-Reflow Löten

• Especially suitable for the wavelength range of 830 nm to 880 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density • BPW 34 FAS/(R18R): Suitable for vapor-phase and IR-reflow soldering

Anwendungen

Applications

• IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Gerätefernsteuerung • Lichtschranken für Gleich- und Wechsellichtbetrieb

• IR-remote control of hi-fi and TV sets, video tape recorders, remote controls of various equipment • Photointerrupters

Typ Type

Bestellnummer Ordering Code

BPW 34 FA

Q62702P1129

BPW 34 FAS

Q65110A3121

BPW 34 FAS (R18R)

Q65110A2699

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BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Grenzwerte Maximum Ratings Bezeichnung Parameter

Symbol Symbol

Wert Value

Einheit Unit

Betriebs- und Lagertemperatur Operating and storage temperature range

Top; Tstg

– 40 … + 100

°C

Sperrspannung Reverse voltage

VR VR (t < 2 min)

16 32

V V

Verlustleistung, TA = 25 ° C Total power dissipation

Ptot

150

mW

Kennwerte (TA = 25 ° C, λ = 870 nm) Characteristics Bezeichnung Parameter

Symbol Symbol

Wert Value

Einheit Unit

Fotostrom Photocurrent VR = 5 V, Ee = 1 mW/cm2

Ip

50 (≥ 40)

µA

Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity

λ S max

880

nm

Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax

λ

730 … 1100

nm

Bestrahlungsempfindliche Fläche Radiant sensitive area

A

7.00

mm2

Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area

L× B

2.65 × 2.65

mm × mm

L× W

Halbwinkel Half angle

ϕ

± 60

Grad deg.

Dunkelstrom, VR = 10 V Dark current

IR

2 (≤30)

nA

Spektrale Fotoempfindlichkeit Spectral sensitivity



0.65

A/W

Quantenausbeute Quantum yield

η

0.93

Electrons Photon

Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage

VO

320 (≥ 250)

mV

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BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Kennwerte (TA = 25 ° C, λ = 870 nm) Characteristics (cont’d) Bezeichnung Parameter

Symbol Symbol

Wert Value

Einheit Unit

Kurzschlussstrom, Ee = 0.5 mW/cm2 Short-circuit current

ISC

23

µA

Anstiegs- und Abfallzeit des Fotostroms Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA

tr , tf

20

ns

Durchlassspannung, IF = 100 mA, E = 0 Forward voltage

VF

1.3

V

Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance

C0

72

pF

Temperaturkoeffizient von VO Temperature coefficient of VO

TCV

– 2.6

mV/K

Temperaturkoeffizient von ISC Temperature coefficient of ISC

TCI

0.03

%/K

Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V

NEP

3.9 × 10– 14

Nachweisgrenze, VR = 10 V, Detection limit

D*

6.8 × 1012

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W -----------Hz cm × Hz --------------------------W

BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Photocurrent IP = f (Ee), VR = 5 V Open-Circuit Voltage VO = f (Ee)

Relative Spectral Sensitivity Srel = f (λ) OHF01430

100

ΙP

Srel %

OHF01428

10 3 µA

10 4 mV VO

Total Power Dissipation Ptot = f (TA) OHF00958

160 mW Ptot 140

80

10 2

10 3

70

VO

100

60

10 1

50

10 2

40

120

ΙP

80 60

30

10 0

10 1

-1

0

40

20

20

10

10

0 400

600

800

1000 nm 1200 λ

10 0

10 2

µW/cm 2

10 10 4

Dark Current

Capacitance C = f (VR), f = 1 MHz, E = 0 OHF00080

4000

0

0

20

40

60

Ee

IR = f (VR), E = 0 ΙR

10 1

OHF00081

100 C

pA

80 ˚C 100 TA

Dark Current

IR = f (TA), VR = 10 V, E = 0 OHF00082

10 3

Ι R nA

pF 80

10 2

3000

70 60 2000

10 1

50 40 30

10 0

1000

20 10 0

0

5

10

15

V VR

0 -2 10

20

10 -1

10 0

10 1

V 10 2 VR

Directional Characteristics Srel = f (ϕ) 40

30

20

10

ϕ

0

OHF01402

1.0

50 0.8 60

0.6

70

0.4

80

0.2 0

90

100

1.0

2005-05-10

0.8

0.6

0.4

0

20

40

60

80

4

100

120

10 -1

0

20

40

60

80 ˚C 100 TA

BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Maßzeichnung Package Outlines BPW 34 FA

5.4 (0.213)

4.3 (0.169)

Chip position 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075)

3.7 (0.146)

3.5 (0.138) 3.0 (0.118)

1.2 (0.047) 0.7 (0.028)

0.8 (0.031) 0.6 (0.024)

4.9 (0.193) 4.5 (0.177)

0.6 (0.024) 0.4 (0.016)

Cathode marking 4.0 (0.157)

0.6 (0.024)

0.6 (0.024) 0.4 (0.016) 0.4 (0.016) 0.35 (0.014) 0.5 (0.020) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024) 1.8 (0.071) 1.4 (0.055)

0 ... 5˚

5.08 (0.200) spacing

Photosensitive area 2.65 (0.104) x 2.65 (0.104)

GEOY6643

BPW 34 FAS

0.3 (0.012)

6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169)

˚ 0.2 (0.008) 0.1 (0.004)

1.1 (0.043) 0.9 (0.035)

0...5

1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004)

Chip position

0.9 (0.035) 0.7 (0.028)

1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146)

1.8 (0.071) ±0.2 (0.008)

Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104)

GEOY6863

Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2005-05-10

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BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)

BPW 34 FAS (R18R)

0...5

˚ 0.2 (0.008) 0.1 (0.004)

1.1 (0.043) 0.9 (0.035)

0.3 (0.012)

1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004)

Chip position

6.7 (0.264) 6.2 (0.244)

1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146)

1.8 (0.071) ±0.2 (0.008)

0.9 (0.035) 0.7 (0.028)

4.5 (0.177) 4.3 (0.169)

Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104)

GEOY6916

Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).

2005-05-10

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BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R) Lötbedingungen Soldering Conditions

BPW 34 FAS BPW 34 FAS (R18R)

Vorbehandlung nach JEDEC Level 4 Preconditioning acc. to JEDEC Level 4

IR-Reflow Lötprofil für bleifreies Löten IR Reflow Soldering Profile for lead free soldering

OHLA0687

300

Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile

˚C

T

(nach J-STD-020B) (acc. to J-STD-020B)

255 ˚C 240 ˚C

250

˚C 260 ˚C +0 -5 ˚C 245 ˚C ±5 ˚C ˚C 235 ˚C +5 -0 ˚C

217 ˚C 10 s min

200 30 s max

Ramp Down 6 K/s (max)

150 100 s max

120 s max 100 Ramp Up 3 K/s (max)

50

25 ˚C 0 0

50

100

150

200

250

s

300

t

Wellenlöten (TTW) TTW Soldering

BPW 34 FA

OHLY0598

300 C T

(nach CECC 00802) (acc. to CECC 00802) 10 s

250

Normalkurve standard curve

235 C ... 260 C

Grenzkurven limit curves

2. Welle 2. wave 200 1. Welle 1. wave 150

ca 200 K/s

2 K/s

5 K/s

100 C ... 130 C 100 2 K/s 50

Zwangskühlung forced cooling

0 0

50

100

150

200 t

2005-05-10

7

s

250

BPW 34 FA, BPW 34 FAS, BPW 34 FAS (R18R)

Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

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