AO4407 30V P-Channel MOSFET General Description

Features

The AO4407/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.AO4407 and AO4407L are electrically identical. -RoHS Compliant -AO4407L is Halogen Free

VDS (V) = -30V ID = -12 A (VGS = -20V) RDS(ON) < 13mΩ (VGS = -20V) RDS(ON) < 14mΩ (VGS = -10V) RDS(ON) < 38mΩ (VGS = -5V) 100% UIS Tested 100% Rg Tested

SOIC-8 Top View D D

D

Bottom View

D D

G

G S

S

S

S

Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF

TA=25°C

Maximum -30

Units V

±25

V

-12

TA=70°C

A

ID IDM

-10

Pulsed Drain Current B Avalanche Current G

IAR

-30

A

EAR

135

mJ

Repetitive avalanche energy L=0.3mH

G

TA=25°C Power Dissipation A

Junction and Storage Temperature Range

Alpha & Omega Semiconductor, Ltd.

3.1

PD

TA=70°C

Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C

-60

TJ, TSTG

-55 to 150

Symbol t ≤ 10s Steady-State Steady-State

W

2

RθJA RθJL

Typ 32 60 17

°C

Max 40 75 24

Units °C/W °C/W °C/W

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AO4407

Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol

Parameter

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage

Conditions

Min

ID=-250µA, VGS=0V

-30 -1

Zero Gate Voltage Drain Current

IGSS

Gate-Body leakage current

VDS=0V, VGS=±25V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-250µA

-1.7

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

60

TJ=55°C

-5 -2.5

-3

V

11

14

15

19

VGS=-20V, ID=-10A

10

13

mΩ

VGS=-5V, ID=-10A

27

38

mΩ

-1

V

-4.2

A

2500

pF

TJ=125°C

gFS

Forward Transconductance

IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current

VDS=-5V, ID=-10A

Coss

Output Capacitance Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge

A

2076 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz

VGS=-10V, VDS=-15V, ID=-12A

mΩ

26 -0.72

DYNAMIC PARAMETERS Ciss Input Capacitance Crss

µA nA

VSD IS

Units

±100

VGS=-10V, ID=-10A Static Drain-Source On-Resistance

Max

V

VDS=-30V, VGS=0V

IDSS

RDS(ON)

Typ

S

503

pF

302

423

pF

1

2

3

Ω

30

37.2

45

nC

7

nC

Qgd

Gate Drain Charge

10.4

nC

tD(on)

Turn-On DelayTime

12.4

ns

tr

Turn-On Rise Time

8.2

ns

VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

IF=-12A, dI/dt=100A/µs

33

Qrr

Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs

23

25.6

ns

12

ns 40

ns nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using