VCE IC

= =

6500 V 400 A

ABB HiPak IGBT Module

5SNA 0400J650100 Doc. No. 5SYA 1592-04 05-2016

 Low-loss, rugged SPT chip-set  Smooth switching SPT chip-set for good EMC  High insulation package  AlSiC base-plate for high power cycling capability  AlN substrate for low thermal resistance  Improved high reliability package  Recognized under UL1557, File E196689 Maximum rated values

1)

Parameter

Symbol

Collector-emitter voltage

max

Unit

VGE = 0 V, Tvj ≥ 25 °C

6500

V

IC

Tc = 85 °C

400

A

Peak collector current

ICM

tp = 1 ms, Tc = 85 °C

800

A

20

V

7350

W

IF

400

A

Peak forward current

IFRM

800

A

Surge current

IFSM

4000

A

10

µs

10200

V

125

°C

Total power dissipation DC forward current

VGES Ptot

-20 Tc = 25 °C, per switch (IGBT)

VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave

IGBT short circuit SOA

tpsc

VCC = 4400 V, VCEM CHIP  6500 V VGE  15 V, Tvj  125 °C

Isolation voltage

Visol

1 min, f = 50 Hz

Junction temperature

Tvj

Junction operating temperature

Tvj(op)

-50

125

°C

Case temperature

Tc

-50

125

°C

Storage temperature

Tstg

-50

125

°C

Mounting torques

2)

min

DC collector current Gate-emitter voltage

1)

VCES

Conditions

2)

Ms

Base-heatsink, M6 screws

4

6

Mt1

Main terminals, M8 screws

8

10

Mt2

Auxiliary terminals, M4 screws

2

3

Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Nm

5SNA 0400J650100

IGBT characteristic values

3)

Parameter

Symbol

Conditions

min

Collector (-emitter) breakdown voltage

V(BR)CES

VGE = 0 V, IC = 10 mA, Tvj = 25 °C

6500

Collector-emitter 4) saturation voltage

VCE sat

IC = 400 A, VGE = 15 V

V

Tvj = 125 °C

5.4

5.9

V

8

mA

80

mA

500

nA

8

V

Tvj = 25 °C

Gate leakage current

IGES

VCE = 0 V, VGE = 20 V, Tvj = 125 °C

-500

VGE(TO)

IC = 160 mA, VCE = VGE, Tvj = 25 °C

6

Input capacitance

Cies

V 4.8

VCE = 6500 V, VGE = 0 V

Qge

Tvj = 125 °C

35

IC = 400 A, VCE = 3600 V, VGE = -15 V .. 15 V

7.4 5.3

Coes

Reverse transfer capacitance

Cres

0.85

Internal gate resistance

RGint

0.81

Turn-on delay time

td(on)

Turn-off delay time Fall time

Turn-on switching energy

Turn-off switching energy Short circuit current

tr td(off) tf

Eon

Eoff ISC

Module stray inductance

L CE

Resistance, terminal-chip

RCC’+EE’

3) 4)

µC

95.3 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C

Output capacitance

Rise time

Unit

4.2

ICES

Gate charge

max

Tvj = 25 °C

Collector cut-off current

Gate-emitter threshold voltage

typ

4.41

VCC = 3600 V, IC = 400 A, RG = 5.6 , VGE = 15 V, L = 280 nH, inductive load

Tvj = 25 °C

700

Tvj = 125 °C

630

Tvj = 25 °C

250

Tvj = 125 °C

220

VCC = 3600 V, IC = 400 A, RG = 5.6 , VGE = 15 V, L = 280 nH, inductive load

Tvj = 25 °C

1410

Tvj = 125 °C

1700

Tvj = 25 °C

650

Tvj = 125 °C

980

VCC = 3600 V, IC = 400 A, VGE = ±15 V, RG = 5.6 , L = 280 nH, inductive load

Tvj = 25 °C

2250

Tvj = 125 °C

2800

VCC = 3600 V, IC = 400 A, VGE = ±15 V, RG = 5.6 , L = 280 nH, inductive load

Tvj = 25 °C

1340

Tvj = 125 °C

2120

nF Ω ns ns ns ns

mJ

mJ

tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 4400 V, VCEM CHIP ≤ 6500 V

1800

A

20

nH

TC = 25 °C

0.1

TC = 125 °C

0.15

mΩ

Characteristic values according to IEC 60747 – 9 Collector-emitter saturation voltage is given at chip level

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-04 05-2016

page 2 of 9

5SNA 0400J650100

Diode characteristic values Parameter Forward voltage

5)

Symbol VF

6)

Reverse recovery current

Qrr

Reverse recovery time

trr

Reverse recovery energy

6)

IF = 400 A

Irr

Recovered charge

5)

VCC = 3600 V, IF = 400 A, VGE = 15 V, RG = 5.6  L = 280 nH inductive load

Erec

min

typ

max

Tvj = 25 °C

3.2

3.8

Tvj = 125 °C

3.4

4.0

Tvj = 25 °C

510

Tvj = 125 °C

680

Tvj = 25 °C

450

Tvj = 125 °C

770

Tvj = 25 °C

1840

Tvj = 125 °C

2120

Tvj = 25 °C

670

Tvj = 125 °C

1380

V A µC ns mJ

7)

Parameter

Symbol

IGBT thermal resistance junction to case Diode thermal resistance junction to case IGBT thermal resistance case to heatsink

2)

Diode thermal resistance case to heatsink

7)

max

Unit

Rth(j-c)IGBT

0.016

K/W

Rth(j-c)DIODE

0.032 K/W

Conditions

min

typ

Rth(c-s)IGBT IGBT per switch,  grease = 1W/m x K

0.012

K/W

Rth(c-s)DIODE Diode per switch,  grease = 1W/m x K

0.024

K/W

Partial discharge extinction voltage

Ve

Comparative tracking index

CTI

f = 50 Hz, QPD  10pC (acc. to IEC 61287) 5100

V  600

For detailed mounting instructions refer to ABB Document No. 5SYA2039

Mechanical properties

7)

Parameter

Symbol

Dimensions

LxW

x

Conditions

H Typical , see outline drawing

min

typ

max

130 x 140 x 48

Clearance distance in air

da

according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term:

40

Surface creepage distance

ds

according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term:

64

Mass

m

7)

Unit

Characteristic values according to IEC 60747 – 2 Forward voltage is given at chip level

Package properties

2)

Conditions

Unit mm mm

26

mm

56 1010

g

Package and mechanical properties according to IEC 60747 – 15

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-04 05-2016

page 3 of 9

5SNA 0400J650100

Electrical configuration C (5)

C (7)

E (4)

E (6)

C (3)

G (2) E (1)

Outline drawing

2)

Note: all dimensions are shown in mm 2)

For detailed mounting instructions refer to ABB Document No. 5SYA2039

This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level.

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-04 05-2016

page 4 of 9

5SNA 0400J650100

800

800

700

700

VCE = 20 V

600

600

25 °C

500

125 °C

IC [A]

IC [A]

500 400

400

300

300

200

200

25 °C

100

125 °C

100 VGE = 15V

0

0 0

1

2

3

4

5

6

7

8

0

1

2

3

4

5

VCE [V]

Fig. 1

6

7

8

9 10 11 12 13

VGE [V]

Typical on-state characteristics, chip level

Fig. 2

Typical transfer characteristics, chip level

800

800

700

700

600

600

17V 15V

17V 15V 13V

400

11V

400

300

300

200

200 9V

100

11V

500

IC [A]

IC [A]

500

13V

9V

100 Tvj = 25 °C

Tvj = 125 °C

0

0 0

1

2

3

4

5

6

7

8

0

VCE [V]

Fig. 3

Typical output characteristics, chip level

1

2

3

4

5

6

7

8

9

10

VCE [V]

Fig. 4

Typical output characteristics, chip level

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-04 05-2016

page 5 of 9

5SNA 0400J650100

8

9 VCC = 3600 V RG = 5.6 ohm VGE = ±15 V Tvj = 125 °C L = 280 nH

7 6

VCC = 3600 V IC = 400 A VGE = ±15 V Tvj = 125 °C L = 280 nH

8 7

Eon

6

Eon, E off [J]

Eon, E off [J]

5 4 Eon

5 4

3 3

Eoff 2

2 Eoff

1

1 Esw [J] = 6.8 x 10-6 x IC2 + 8.5 x 10-3 x IC + 0.451

0

0 0

100

200 300

400

500

600 700

800

0

900

5

10

Fig. 5

Typical switching energies per pulse vs collector current

Fig. 6

10

20

25

30

35

40

Typical switching energies per pulse vs gate resistor

10

td(off) 1

VCC = 3600 V IC = 400 A VGE = ±15 V Tvj = 125 °C L = 280 nH

td(on) , t r, t d(off) , t f [µs]

VCC = 3600 V RG = 5.6 ohm VGE = ±15 V Tvj = 125 °C L = 280 nH

td(on) , t r, t d(off) , t f [µs]

15

RG [ohm]

IC [A]

tf td(on)

td(off) td(on)

1

tf

tr

tr

0.1

0.1 0

200

400

600

800

1000

0

IC [A]

Fig. 7

Typical switching times vs collector current

5

10

15

20

25

30

35

40

RG [ohm]

Fig. 8

Typical switching times vs gate resistor

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-04 05-2016

page 6 of 9

5SNA 0400J650100

1000

20 VGE = 0V fOSC = 1 MHz VOSC = 50 mV

VCC = 3600 V

Cies 15

VGE [V]

C [nF]

100

Coes

10

10

Cres 5

1

IC = 400 A Tvj = 25 °C 0

0.1 0

Fig. 9

5

10

15 20 VCE [V]

25

30

0

35

1

2

3

4

5

Qg [µC]

Typical capacitances vs collector-emitter voltage

Fig. 10

Typical gate charge characteristics

2.5 VCC  4400 V, Tvj = 125 °C, VGE = ±15 V RGoff = 5.6 ohm, L  280 nH 2

ICpulse / I C

1.5

1

0.5 Chip Module 0 0

Fig. 11

1000

2000

3000 4000 VCE [V]

5000

6000

7000

Turn-off safe operating area (RBSOA)

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-04 05-2016

page 7 of 9

5SNA 0400J650100

1600 1400 1200

800

Irr

600

Qrr

800

Irr 600 400

400 200

200 Erec [mJ] = -2.1 x 10-3 x IC2 + 3.58 x IC + 286

0

0 0

100 200 300 400 500 600 700 800 900

0

IF [A]

Fig. 12

0.5

1

1.5

2

2.5

di/dt [kA/µs]

Typical reverse recovery characteristics vs forward current

Fig. 13

800

Typical reverse recovery characteristics vs di/dt

1000 VCC  4400 V di/dt  2500 A/µs Tvj = 125 °C L  280 nH

700 800 600 25 °C

125 °C

500

600

IR [A]

IF [A]

RG = 5.6 ohm

1000

1000

RG = 8.2 ohm

Qrr

1200

Erec

RG = 12 ohm

1400

Erec [mJ], I rr [A], Q rr [µC]

Erec [mJ], I rr [A], Q rr [µC]

1600

VCC = 3600 V IF = 400 A VGE = ±15 V Tvj = 125 °C L = 280 nH

RG = 39 ohm

1800

Erec

RG = 18 ohm

VCC = 3600 V RG = 5.6 ohm VGE = ±15 V Tvj = 125 °C L = 280 nH

RG = 27 ohm

2000

400

400

300 200

200 100 0

0 0

1

2

3

4

5

0

VF [V]

Fig. 14

Typical diode forward characteristics, chip level

1000 2000 3000 4000 5000 6000 7000 VR [V]

Fig. 15

Safe operating area diode (SOA)

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-04 05-2016

page 8 of 9

5SNA 0400J650100

0.1

Analytical function for transient thermal impedance:

n

Z th (j-c) (t) =  R i (1 - e-t/ i )

Zth(j-c) IGBT

0.01

0.001

0.0001 0.001

Fig. 16

0.01

0.1 t [s]

1

i

1

2

IGBT

i 1

Ri(K/kW)

12.75

2.99

i(ms)

151

5.84

DIODE

Zth(j-c) [K/W] IGBT, DIODE

Zth(j-c) Diode

Ri(K/kW)

25.5

6.3

i(ms)

144

5.83

3

4

5

10

Thermal impedance vs time

Related documents: 5SYA 2042 Failure rates of HiPak modules due to cosmic rays 5SYA 2043 Load – cycle capability of HiPaks 5SYA 2045 Thermal runaway during blocking 5SYA 2053 Applying IGBT 5SYA 2058 Surge currents for IGBT diodes 5SYA 2093 Thermal design of IGBT modules 5SYA 2098 Paralleling of IGBT modules 5SZK 9111 Specification of environmental class for HiPak Storage 5SZK 9112 Specification of environmental class for HiPak Transportation 5SZK 9113 Specification of environmental class for HiPak Operation (Industry) 5SZK 9120 Specification of environmental class for HiPak

ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet

+41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors

We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is excluded.

Doc. No. 5SYA 1592-04 05-2016