8th European Conference on Silicon Carbide and Related Materials

Conference Organization Local organizing committee Viktor Bobal UiO, Norway Arve Holt Institute for Energy Technology, Norway Rolf Johannessen SINTEF/...
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Conference Organization Local organizing committee Viktor Bobal UiO, Norway Arve Holt Institute for Energy Technology, Norway Rolf Johannessen SINTEF/ICT, Norway Andrej Yu. Kuznetsov (Summer school) UiO, Norway Hilde Lynnebakken UiO, Norway

Exhibition Lars Løvlie UiO, Norway Edouard Monakhov UiO, Norway Ioana Pintilie UiO, Norway Augustinas Galeckas UiO, Norway Bengt Svensson UiO, Norway

International steering committee

Danilo Crippa LPE. Italy Mike Dudley Stony Brook University, USA Adam Gali Budapest University of Technology and Economics, Hungary Philippe Godignon CNM, Spain Martin Hundhausen University of Erlangen-Nürnberg, Germany Erik Janzén University of Linköping, Sweden Alexander Lebedev IOFFE, Russia Hiroyuki Matsunami JST, Japan Roberta Nipoti CNR-IMM, Italy Michel Pons INPG/CNRS, France Roland Rupp Infineon Technologies, Germany Adolf Schöner ACREO, Sweden Bengt Svensson University of Oslo, Norway

Novel advisory panel

Peter Deak University of Bremen, Germany Chris Harris CREE, Sweden C. Mark Johnson University of Nottingham, UK

A technical exhibition will be held during the conference. Companies and organizations that provide materials, devices, equipment and services for testing, characterization, production and development of products based on SiC and related materials are encouraged to exhibit at the conference. Further information can be found at the conference web site.

Summer School

A summer school on wide energy bandgap semiconductors will be organized immediately before ECSCRM2010 (August 27 – 29) at the conference venue. The school addresses PhD-students and Postdocs and further information can be found at the conference web site.

Official Web Site and further information

A final announcement and call for abstracts will be made in January 2010. For details and the latest information, please visit the official conference web site at:

www.ecscrm10.com or contact: Hilde Lynnebakken University of Oslo, Department of Physics Tel: +47 22 85 64 26 Fax: +47 22 85 64 22 e-mail: [email protected]

8th European Conference on Silicon Carbide and Related Materials Oslo, Norway August 29 – September 2, 2010

Scope

The aim of the conference is to communicate and discuss recent progress in crystal growth, characterization and control of material properties as well as other basic research issues concerning silicon carbide (SiC) and related materials, including graphene and wide bandgap semiconductors like III-nitrides, diamond and zinc oxide. New results relevant to wafer production processes, device fabrication technologies and device applications are also central to the conference. The objective is to promote the development and commercialization of advanced devices, sensors, and systems used for energy saving, high voltage switching, high temperature operation, high frequency and high power amplification, photovoltaics and radiation hard operation. The conference aims to act as an international forum for the exchange of ideas and opinions on recent scientific and technical issues among researchers and engineers in academic, industrial and public sectors.

Topics • • • • • • • • • •

Fundamentals (theory and experiment) Bulk and epitaxial growth New materials grown on SiC Materials characterization Surfaces and interfaces Processing and device fabrication Devices (power switching, RF power, energy harvest ing, high-temperature, radiation-hard, sensors/ detectors, MEMS) Device physics (measurement, modeling, simulation, testing and reliability) Packing and modular technology Circuits and system applications

Location and conference venue

The ECSCRM 2010 Conference will be held at the Conference Hotel Sundvolden, www.sundvolden.no, situated in a rural landscape 40 kilometers from the city centre of Oslo. Oslo is the capitol of Norway, and is famous for the Viking ship museum, the Vigeland park, Munch’s art and KonTiki. Among the more recent additions to the city’s list of attractions we find the new opera house and the fossil Ida - the Link.

Important dates

Final announcement and call for abstracts: January 2010 Abstract submission deadline: 12th of April 2010 Notice of acceptance: 21st of May 2010 Registration deadline (reduced fee): 11th of June 2010 Late news deadline: 15th of July 2010 Late news, notice of acceptance: 30th of July 2010 Late registration deadline: 10th of August 2010 Papers submission deadline: 13th of August 2010

Notes to authors

The official language of the conference is English, which will be used for all presentations and printed materials. Authors are expected to present their papers in person at the conference and except for late new papers, a condition for full acceptance is that at least one of the authors has registered before 11th of June 2010.

Publication of papers

The proceedings will be published in a conference series. The authors of accepted papers will be asked to submit manuscripts two weeks in advance of the conference to facilitate reviewing. The manuscript format and detailed instructions will be forwarded to the authors together with the notification of acceptance.

Photos in this leaflet: The front page shows the Oslo Opera House, whilst the statues of the young boys may be found in the Vigeland Park.

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Oral Poster

Macro-step bunching behavior during 4H-SiC epitaxial growth on 4o off axis substrate using BTMSM H. S. Seoa, J. H. Yima, D. H. Leea, W. Bahngb, S. C. Kimb and H. J. Kima Email: [email protected] a

School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea b Center for Energy Efficient Semiconductors, Korea Electrotechnology Research Institute, Changwon, Korea Silicon carbide is the most promising wide band-gap semiconductor materials for high power and high frequency devices due to its superior electrical and mechanical properties[1] and, as a result, its predominance in high power devices is well established. Among the many polytypes of SiC, most recent works have focused on 4H-SiC, due to the high saturated electron drift velocity and commercial availability. Step-controlled epitaxy for SiC was introduced by Matsunami et al [2] and 4o and 8o off axis substrate towards the [11 -2 0] are commercially used for device application and epitaxial growth of SiC. It has also been found that epitaxy on 4° off-angle substrates reduce basal plane dislocations (BPD) in the epitaxial layer, compared to epitaxy 8° off-axis substrates because BPD is on the c-plane and replicated from substrate. The reduction of BPD is important in SiC epitaxial growth, since BPD has been investigated to degrade bipolar devices performances and reliability.[3]. In this paper, the authors describe the epitaxial growth of 4H-SiC on 4o off axis substrate by hot-wall CVD using BTMSM precursor. The macro-step bunching behavior during epitaxial growth was investigated. The experiments were performed in horizontal hot- wall CVD reactor. The n-type 4o off-axis 4H-SiC (0001) substrates (Si face) were used. The growth temperature was varied from 1400 to 1600 oC. The pre-etching was done for 10 min at various temperatures, from 1470 to 1570 oC in hydrogen atmosphere. The growth of film on 4H-SiC substrate was done for 2 hours. The surface morphology of the film was investigated by Scanning Electron Microscope (SEM), Nomarski microscopy and Atomic Force Microscope (AFM). The pre-etching in hydrogen atmosphere at various temperatures was investigated before epitaxial growth. Pre-etching at 1500 oC, step bunching began to appear on substrate surface and as the etching temperature increased, step bunching on surface was increased. All films grown on substrate pre-etched at 1570 oC have macro-step bunching. In Fig 1, morphology of the films degrades with CH4 addition during growth. It is though that additional carbon act as impurities for step flow growth. In fig. 2, Nomarski Microscope imamges of epitaxial film with fixed C/Si ratio at the various temperatures are shown. Macro-step bunching appeared on the epitaxy grown above 1500 oC. During growth, growth temperature and C/Si ratio affects the occurrence of macro-step bunching on the epilayer. Acknowledgement

This work was supported by the Power Generation & Electricity Delivery of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy. References [1] P. G. Neudeck, D. J. Larkin, J. A. Powell, L. G. Matus, and C. S. Salupo, Appl. Phys. Lett. 64, 1386 (1994).. [2] T. Kimoto, H. Nishino, W. S. Yoo, and H. Matsunami, J. Appl. Phys. 73, 726 (1993). [3] M.Skronski, S. Ha, JOURNAL OF APPLIED PHYSICS 99, 011101 (2006).

Fig. 1. CH4 addition during growth on substrate preetched at 1530 oC (a) 0 sccm, (b) 1 sccm, (c) 3 sccm and (d) 10 sccm

Fig. 2. Epitaxial growth on substrate pre-etched at 1470 o C with growth temperature (a) 1470 oC, (b) 1500 oC, and (c) 1530 oC

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