32Gb NAND Flash H27UBG8T2A

Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash 32Gb NAND Flash H27UBG8T2A Rev 0.6 / Dec. 2009 1 Preliminary H27UBG8T2A Series 32Gb ...
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Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash

32Gb NAND Flash H27UBG8T2A

Rev 0.6 / Dec. 2009

1

Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash

Product Feature ■

Multilevel Cell technology



Endurance - 3,000 P/E cycles (with 24 bit/ 1,024byte ECC)



Supply Voltage



- 3.3V device : Vcc = 2.7 V ~ 3.6 V

Data Retention - 10 Years

Vcc = 2.7 V ~ 3.6 V ■

Organization



Package

- Page size : 8,640 Bytes(8192+448 bytes)

- TSOP (12x20)

- Block size : 256 pages(2M+112K bytes)

- LGA (14x18)

- Plane size : 1,024 blocks ■

Page Read Time



Unique ID for copyright protection

- Random Access: 200 ㎲ (Max.) - Sequential Access : 25 ㎱ (Min.) ■

Write Time - Page program : 1600 ㎲ (Typ.) - Block erase : 2.5 ㎳ (Typ.)



Operating Current - Read

- Program - Erase - Standby ■

Hardware Data Protection - Program/Erase locked during power transitions

Rev 0.6 / Dec. 2009

3

Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash

1. SUMMARY DESCRIPTION The product part NO.(H27UBG8T2A) is a single 3.3V 32Gbit NAND flash memory. The Device contains 2 planes in a single die. Each plane is made up of the 1024 blocks. Each block consists of 256 programmable pages. Each page contains 8,640 bytes. The pages are subdivided into an 8192-bytes main data storage area with a spare 448-byte district. Page program operation can be performed in typical 1,600us, and a single block can be erased in typical 2.5ms. On-chip control logic unit automates erase and program operations to maximize cycle endurance. E/W endurance is stipulated at 3,000 cycles when using relevant ECC and Error management. The H27UBG8T2A is a best solution for applications requiring large nonvolatile storage memory.

1.1. Product List

Table 1 PART NUMBER

ORGANIZATION

Vcc RANGE

H27UBG8T2A

X8

2.7V ~ 3.6V

Rev 0.6 / Dec. 2009

PACKAGE 48 - TSOP1 52 - LGA

4

Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash 1.2. Packaging Information ■ Figure 1. 48-TSOP1 Contact, x8 Device

NC NC NC NC NC NC R/B RE CE NC NC Vcc Vss NC NC CLE ALE WE WP NC NC NC NC NC

1

12 13

48

NAND Flash TSOP1

37 36

(x8)

24

25

NC NC NC NC I/O7 I/O6 I/O5 I/O4 NC NC NC Vcc Vss NC NC NC I/O3 I/O2 I/O1 I/O0 NC NC NC NC

■ Figure 1-1. 48-TSOP1 - 48-lead Plastic Thin Small Outline, 12 x 20mm, Package Outline 

H '

$

$

% $ 



Į

/

',(

( (

Symbol

& &3 millimeters Min

Typ

A A1

Max 1.200

0.050

0.150

A2

0.980

1.030

B

0.170

0.250

C

0.100

0.200

CP

0.100

D

11.910

12.000

12.120

E

19.900

20.000

20.100

E1

18.300

18.400

18.500

e

0.500

L

0.500

0.680

alpha

0

5

48-TSOP1 - 48-lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data Rev 0.6 / Dec. 2009

5

Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash ■ Figure 2. 52-VLGA Contact, x8 Device

OA NC

CLE

NC

OB

/CE

VSS

NC

ALE

NC

NC

NC

NC

VSS VSS NC

VCC

NC

NC

Rev 0.6 / Dec. 2009

K

M N

VCC

NC

NC

0

F

L VSS

VCC

E

J

NC

IO4

D

H

NC IO5

IO3

NC

OF

IO6

C

G

IO7 IO2

NC

OE

NC

NC

NC

IO1

NC

NC

VSS IO0

NC

NC

R/B

/WP

OD

/RE

A B

NC /WE

NC

NC

VCC

NC

OC

NC

1

2

3

4 5

6

7

8

6

Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash ■ Figure 2-1. 52-VLGA, 14 x 18mm, Package Outline (Top view through package)

% % % ' '

& & &

FS  0 &

%$$ $ $

FS  0 &

%$(

Symbol A

millimeters Min

Typ

Max

17.90

18.00

18.10

A1

13.00

A2

12.00

B

13.90

14.00

B1

10.00

B2

6.00

C

1.00

C1

1.50

C2

2.00

D

1.00

D1

1.00

14.10

E

0.80

0.90

1.00

CP1

0.65

0.70

0.75

CP2

0.95

1.00

1.05

52-VLGA, 14 x 18mm, Package Mechanical Data

Rev 0.6 / Dec. 2009

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Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash

2. Electrical Characteristics 2.1. Valid Blocks

Valid Block Number

Symbol

Min

NVB

1998

Typ

Max

Unit

2048

Blocks

Notes: 1. The 1st block is guaranteed to be a valid block at the time of shipment. 2. This single device has a maximum of 50 invalid blocks. 3. Invalid blocks are one that contains one or more bad bits. The device may contain bad blocks upon shipment.

2.2. Absolute Maximum Rating Symbol

Parameter

Value Min

Unit

Ambient Operating Temperature (Commercial Temperature Range)

0 to 70

°C

Ambient Operating Temperature (Extended Temperature Range)

-25 to 85

°C

Ambient Operating Temperature (Industrial Temperature Range)

-40 to 85

°C

TBIAS

Temperature Under Bias

-50 to 125

°C

TSTG

Storage Temperature

-65 to 150

°C

VIO

Input or Output Voltage

-0.6 to 4.6

V

VCC

Supply Voltage

-0.6 to 4.6

V

TA

Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the Hynix SURE Program and other relevant quality documents. 2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.

Rev 0.6 / Dec. 2009

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Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash 2.3. DC and Operating Characteristics HY27UCG8T2A Parameter

Symbol

Power on reset current

Operating Current

Read

Test Conditions

ICC0

FFh command input after power on

ICC1

tRC= tRC(min), CE#=VIL,

3.3V

Unit

Min

Typ

Max

-

-

50per device



-

-

50



IOUT=0 ㎃ Program

ICC2

-

-

-

50



Erase

ICC3

-

-

-

50



Stand-by Current (TTL)

ICC4

CE#=VIH, WP#=0V/ VCC

-

-

1



Stand-by Current (CMOS)

ICC5

CE#=VCC-0.2, WP#=0V/VCC

-

10

50



Input Leakage Current

ILI

VIN=0 to VCC(MAX)

-

-

± 10



Output Leakage Current

ILO

VOUT=0 to VCC(MAX)

-

-

± 10



Input High Voltage

VIH

-

Vccx0.8

-

Vcc+0.3

V

Input Low Voltage

VIL

-

-0.3

-

0.2x Vcc

V

Output High Voltage

VOH

IOH=-200 ㎂

2.4

-

-

V

Output Low Voltage

VOL

IOL=2.1 ㎃

-

-

0.4

V

Output Low Current (R/B#)

IOL(R/B#)

VOL=0.4V

8

10

-



Rev 0.6 / Dec. 2009

17