Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash
32Gb NAND Flash H27UBG8T2A
Rev 0.6 / Dec. 2009
1
Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash
Product Feature ■
Multilevel Cell technology
■
Endurance - 3,000 P/E cycles (with 24 bit/ 1,024byte ECC)
■
Supply Voltage
■
- 3.3V device : Vcc = 2.7 V ~ 3.6 V
Data Retention - 10 Years
Vcc = 2.7 V ~ 3.6 V ■
Organization
■
Package
- Page size : 8,640 Bytes(8192+448 bytes)
- TSOP (12x20)
- Block size : 256 pages(2M+112K bytes)
- LGA (14x18)
- Plane size : 1,024 blocks ■
Page Read Time
■
Unique ID for copyright protection
- Random Access: 200 ㎲ (Max.) - Sequential Access : 25 ㎱ (Min.) ■
Write Time - Page program : 1600 ㎲ (Typ.) - Block erase : 2.5 ㎳ (Typ.)
■
Operating Current - Read
- Program - Erase - Standby ■
Hardware Data Protection - Program/Erase locked during power transitions
Rev 0.6 / Dec. 2009
3
Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash
1. SUMMARY DESCRIPTION The product part NO.(H27UBG8T2A) is a single 3.3V 32Gbit NAND flash memory. The Device contains 2 planes in a single die. Each plane is made up of the 1024 blocks. Each block consists of 256 programmable pages. Each page contains 8,640 bytes. The pages are subdivided into an 8192-bytes main data storage area with a spare 448-byte district. Page program operation can be performed in typical 1,600us, and a single block can be erased in typical 2.5ms. On-chip control logic unit automates erase and program operations to maximize cycle endurance. E/W endurance is stipulated at 3,000 cycles when using relevant ECC and Error management. The H27UBG8T2A is a best solution for applications requiring large nonvolatile storage memory.
1.1. Product List
Table 1 PART NUMBER
ORGANIZATION
Vcc RANGE
H27UBG8T2A
X8
2.7V ~ 3.6V
Rev 0.6 / Dec. 2009
PACKAGE 48 - TSOP1 52 - LGA
4
Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash 1.2. Packaging Information ■ Figure 1. 48-TSOP1 Contact, x8 Device
NC NC NC NC NC NC R/B RE CE NC NC Vcc Vss NC NC CLE ALE WE WP NC NC NC NC NC
1
12 13
48
NAND Flash TSOP1
37 36
(x8)
24
25
NC NC NC NC I/O7 I/O6 I/O5 I/O4 NC NC NC Vcc Vss NC NC NC I/O3 I/O2 I/O1 I/O0 NC NC NC NC
■ Figure 1-1. 48-TSOP1 - 48-lead Plastic Thin Small Outline, 12 x 20mm, Package Outline
H '
$
$
% $
Į
/
',(
( (
Symbol
& &3 millimeters Min
Typ
A A1
Max 1.200
0.050
0.150
A2
0.980
1.030
B
0.170
0.250
C
0.100
0.200
CP
0.100
D
11.910
12.000
12.120
E
19.900
20.000
20.100
E1
18.300
18.400
18.500
e
0.500
L
0.500
0.680
alpha
0
5
48-TSOP1 - 48-lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data Rev 0.6 / Dec. 2009
5
Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash ■ Figure 2. 52-VLGA Contact, x8 Device
OA NC
CLE
NC
OB
/CE
VSS
NC
ALE
NC
NC
NC
NC
VSS VSS NC
VCC
NC
NC
Rev 0.6 / Dec. 2009
K
M N
VCC
NC
NC
0
F
L VSS
VCC
E
J
NC
IO4
D
H
NC IO5
IO3
NC
OF
IO6
C
G
IO7 IO2
NC
OE
NC
NC
NC
IO1
NC
NC
VSS IO0
NC
NC
R/B
/WP
OD
/RE
A B
NC /WE
NC
NC
VCC
NC
OC
NC
1
2
3
4 5
6
7
8
6
Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash ■ Figure 2-1. 52-VLGA, 14 x 18mm, Package Outline (Top view through package)
% % % ' '
& & &
FS 0 &
%$$ $ $
FS 0 &
%$(
Symbol A
millimeters Min
Typ
Max
17.90
18.00
18.10
A1
13.00
A2
12.00
B
13.90
14.00
B1
10.00
B2
6.00
C
1.00
C1
1.50
C2
2.00
D
1.00
D1
1.00
14.10
E
0.80
0.90
1.00
CP1
0.65
0.70
0.75
CP2
0.95
1.00
1.05
52-VLGA, 14 x 18mm, Package Mechanical Data
Rev 0.6 / Dec. 2009
7
Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash
2. Electrical Characteristics 2.1. Valid Blocks
Valid Block Number
Symbol
Min
NVB
1998
Typ
Max
Unit
2048
Blocks
Notes: 1. The 1st block is guaranteed to be a valid block at the time of shipment. 2. This single device has a maximum of 50 invalid blocks. 3. Invalid blocks are one that contains one or more bad bits. The device may contain bad blocks upon shipment.
2.2. Absolute Maximum Rating Symbol
Parameter
Value Min
Unit
Ambient Operating Temperature (Commercial Temperature Range)
0 to 70
°C
Ambient Operating Temperature (Extended Temperature Range)
-25 to 85
°C
Ambient Operating Temperature (Industrial Temperature Range)
-40 to 85
°C
TBIAS
Temperature Under Bias
-50 to 125
°C
TSTG
Storage Temperature
-65 to 150
°C
VIO
Input or Output Voltage
-0.6 to 4.6
V
VCC
Supply Voltage
-0.6 to 4.6
V
TA
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the Hynix SURE Program and other relevant quality documents. 2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
Rev 0.6 / Dec. 2009
16
Preliminary H27UBG8T2A Series 32Gb (4096M x 8bit) NAND Flash 2.3. DC and Operating Characteristics HY27UCG8T2A Parameter
Symbol
Power on reset current
Operating Current
Read
Test Conditions
ICC0
FFh command input after power on
ICC1
tRC= tRC(min), CE#=VIL,
3.3V
Unit
Min
Typ
Max
-
-
50per device
㎃
-
-
50
㎃
IOUT=0 ㎃ Program
ICC2
-
-
-
50
㎃
Erase
ICC3
-
-
-
50
㎃
Stand-by Current (TTL)
ICC4
CE#=VIH, WP#=0V/ VCC
-
-
1
㎃
Stand-by Current (CMOS)
ICC5
CE#=VCC-0.2, WP#=0V/VCC
-
10
50
㎂
Input Leakage Current
ILI
VIN=0 to VCC(MAX)
-
-
± 10
㎂
Output Leakage Current
ILO
VOUT=0 to VCC(MAX)
-
-
± 10
㎂
Input High Voltage
VIH
-
Vccx0.8
-
Vcc+0.3
V
Input Low Voltage
VIL
-
-0.3
-
0.2x Vcc
V
Output High Voltage
VOH
IOH=-200 ㎂
2.4
-
-
V
Output Low Voltage
VOL
IOL=2.1 ㎃
-
-
0.4
V
Output Low Current (R/B#)
IOL(R/B#)
VOL=0.4V
8
10
-
㎃
Rev 0.6 / Dec. 2009
17
