WMS256K16-XXX
256Kx16 MONOLITHIC SRAM, SMD 5962-96902
PIN CONFIGURATION FOR WMS256K16-XXX
FEATURES Access Times 17, 20, 25, 35ns MIL-STD-883 Compliant Devices Available
44 CSOJ
Packaging • 44 pin Ceramic SOJ (Package 102)
44 FlatpacK
• 44 lead Ceramic Flatpack (Package 225)
TOP VIEW
Organized as 256Kx16
A0 A1 A2 A3 A4 CS# I/O1 I/O2 I/O3 I/O4 VCC GND I/O5 I/O6 I/O7 I/O8 WE# A5 A6 A7 A8 A9
Data Byte Control: • Lower Byte (LB#) = I/O1-8 • Upper Byte (UB#) = I/O9-16 2V Minimum Data Retention for battery back up operation (WMS256K16L-XXX Low Power Version Only) Commercial, Industrial and Military Temperature Range 5V Power Supply Low Power CMOS TTL Compatible Inputs and Outputs
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
A17 A16 A15 OE# UB# LB# I/O16 I/O15 I/O14 I/O13 GND VCC I/O12 I/O11 I/O10 I/O9 NC A14 A13 A12 A11 A10
PIN DESCRIPTION A0-17 LB# UB# I/O1-16 CS# OE# WE# VCC GND NC
Address Inputs Lower-Byte Control (I/O1-8) Upper-Byte Control (I/O9-16) Data Input/Output Chip Select Output Enable Write Enable +5.0V Power Ground No Connection
Microsemi Corporation reserves the right to change products or specifications without notice. May 2013 Rev. 8
© 2013 Microsemi Corporation. All rights reserved.
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Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
TRUTH TABLE CS#
WE#
OE#
LB#
UB#
Mode
H L L
X H X
X H X
L
H
L
L
L
X
X X H L H L L H L
X X H H L L H L L
Data I/O
Not Select
I/O9-16 High Z
Standby
Output Disable
High Z
High Z
Active
Data Out High Z Data Out Data In High Z Data In
High Z Data Out Data Out High Z Data In Data In
Read
Write
ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Signal Voltage Relative to GND Junction Temperature Supply Voltage
Symbol TA TSTG VG TJ VCC
Min -55 -65 -0.5 -0.5
Power
I/O1-8 High Z
Active
Active
RECOMMENDED OPERATING CONDITIONS
Max +125 +150 VCC+0.5 150 7.0
Unit °C °C V °C V
Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temp. (Mil.)
Symbol VCC VIH VIL TA
Min 4.5 2.2 -0.3 -55
Max 5.5 VCC + 0.3 +0.8 +125
Unit V V V °C
CAPACITANCE TA = +25°C Parameter Input capacitance Output capacitance
Symbol CIN COUT
Condition VIN = 0V, f = 1.0MHz VOUT = 0V, f = 1.0MHz
Max 20 20
Unit pF pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C Parameter Input Leakage Current Output Leakage Current Operating Supply Current Standby Current Output Low Voltage Output High Voltage
Symbol ILI ILO ICC ISB VOL VOH
Conditions VCC = 5.5, VIN = GND to VCC CS# = VIH, OE# = VIH, VOUT = GND to VCC CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5 CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5 IOL = 6mA, VCC = 4.5 IOH = -4.0mA, VCC = 4.5
Min
Max 10 10 275 17 0.4
2.4
Units μA μA mA mA V V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
LOW POWER DATA RETENTION CHARACTERISTICS (WMS256K16L-XXX ONLY) -55°C ≤ TA ≤ +125°C Parameter Data Retention Supply Voltage Data Retention Current
Symbol VDR ICCDR1
Conditions CS# ≥ VCC -0.2V VCC = 3V
Min 2.0
Typ
Max 5.5
Units V
1.0
8.0
mA
Microsemi Corporation reserves the right to change products or specifications without notice. May 2013 Rev. 8
© 2013 Microsemi Corporation. All rights reserved.
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Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
AC CHARACTERISTICS VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C Parameter
-17
Symbol
Read Cycle Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Output Enable to Output Valid Chip Select to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z LB#, UB# Access Time LB#, UB# Enable to Low Z Output LB#, UB# Disable to High Z Output
Min 17
tRC tAA tOH tACS tOE tCLZ1 tOLZ1 tCHZ1 tOHZ1 tBA tBLZ1 tBHZ1
-20 Max
Min 20
17 0
-25 Max
0
Min 35
35
0
0 25 15
35 20
5 0
9 9 10
5 0
10 10 12 0
12 12 14
15 15 17
0
9
Max
25
20 12 5 0
0
-35 Max
20
17 10 2 0
Min 25
0
10
12
15
Units ns ns ns ns ns ns ns ns ns ns ns ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C Parameter
-17
Symbol
Write Cycle Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Address Hold Time Output Active from End of Write Write Enable to Output in High Z Data Hold Time LB#, UB# Valid to End of Write
Min 17 14 14 10 14 0 2 0
tWC tCW tAW tDW tWP tAS tAH tOW1 tWHZ1 tDH tBW
-20 Max
Min 20 17 17 12 17 0 2 0
9 0 14
-25 Max
Min 25 20 20 15 20 0 2 0
10 0 17
-35 Max
Min 35 25 25 20 25 0 2 0
Max
10
15
0 20
0 25
Units ns ns ns ns ns ns ns ns ns ns ns
1. This parameter is guaranteed by design but not tested.
AC TEST CIRCUIT
AC TEST CONDITIONS Parameter
I OL Current Source
VZ
D.U.T.
Unit
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
NOTES: Vz is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω. Vz is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance.
» 1.5V
(Bipolar Supply)
C eff = 50 pf
Typ
Input Pulse Levels
I OH Current Source
Microsemi Corporation reserves the right to change products or specifications without notice. May 2013 Rev. 8
© 2013 Microsemi Corporation. All rights reserved.
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Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
TIMING WAVEFORM – READ CYCLE tRC ADDRESS tAA CS#
tRC ADDRESS
tCHZ
tACS tAA LB#, UB#
DATA I/O
tBHZ
tBA
tOH
tBLZ
PREVIOUS DATA VALID
tCLZ
DATA VALID OE#
READ CYCLE 1 (CS# = OE# = VIL, UB# or LB# = VIL, WE# = VIH)
tOE
tOHZ
tOLZ DATA I/O
DATA VALID HIGH IMPEDANCE READ CYCLE 2 (WE# = VIH)
WRITE CYCLE – WE# CONTROLLED tWC ADDRESS
tAW
tAH
tCW CS#
tBW LB#, UB#
tAS
tWP
WE#
tOW tWHZ
DATA I/O
tDW
tDH
DATA VALID
WRITE CYCLE 1, WE# CONTROLLED
WRITE CYCLE – CS# CONTROLLED
WRITE CYCLE – LB#, UB# CONTROLLED tWC
tWC ADDRESS
ADDRESS
tAS
tAW
tAH
tCW
tAS
tAW
tAH
tCW
CS#
CS#
tBW
tBW
LB#, UB#
LB#, UB#
tWP
tWP
WE#
WE#
tDW DATA I/O
tDH
tDW DATA I/O
DATA VALID
WRITE CYCLE 2, CS# CONTROLLED
tDH
DATA VALID
WRITE CYCLE 3, LB#, UB# CONTROLLED
Microsemi Corporation reserves the right to change products or specifications without notice. May 2013 Rev. 8
© 2013 Microsemi Corporation. All rights reserved.
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Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
PACKAGE 102: 44 LEAD, CERAMIC SOJ
3.96 (0.156) MAX
28.70 (1.13) ± 0.25 (0.010)
0.89 (0.035) Radius TYP
0.2 (0.008) ± 0.05 (0.002)
11.3 (0.446) ± 0.2 (0.009)
9.55 (0.376) ± 0.25 (0.010)
1.27 (0.050) ± 0.25 (0.010)
1.27 (0.050) TYP 26.7 (1.050) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 225: 44 LEAD, CERAMIC FLAT PACK
28.45 (1.120)
± 0.26 (0.010)
2.60 (0.102) MAX
12.95 (0.510)
± 0.13 (0.005)
10.16 (0.400)
± 0.51 (0.020)
0.43 (0.017) ± 0.05 (0.002)
0.14 (0.006) ± 0.05 (0.002)
26.67 (1.050) TYP
1.27 (0.050) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice. May 2013 Rev. 8
© 2013 Microsemi Corporation. All rights reserved.
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Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
ORDERING INFORMATION
W M S 256K16 X - XXX X X X MICROSEMI CORPORATION MONOLITHIC SRAM ORGANIZATION, 256K x 16 IMPROVEMENT MARK: Blank = Standard Power L = Low Power Data Retention ACCESS TIME (ns) PACKAGE: DL = 44 Lead Ceramic SOJ (Package 102) FL = 44 Lead Ceramic Flatpack (Package 225) DEVICE GRADE: M = Military Screened I = Industrial C = Commercial
-55°C to +125°C -40°C to +85°C 0°C to +70°C
LEAD FINISH: Blank = Gold plated leads A = Solder dip leads
Microsemi Corporation reserves the right to change products or specifications without notice. May 2013 Rev. 8
© 2013 Microsemi Corporation. All rights reserved.
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Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
DEVICE TYPE
SPEED
PACKAGE
SMD NO
256K x 16 SRAM Monolithic
35ns
44 lead SOJ (DL)
5962-96902 01HMX
256K x 16 SRAM Monolithic
25ns
44 lead SOJ (DL)
5962-96902 02HMX
256K x 16 SRAM Monolithic
20ns
44 lead SOJ (DL)
5962-96902 03HMX
256K x 16 SRAM Monolithic
17ns
44 lead SOJ (DL)
5962-96902 04HMX
256K x 16 SRAM Monolithic
35ns
44 lead Flatpack (FL)
5962-96902 01HNX
256K x 16 SRAM Monolithic
25ns
44 lead Flatpack (FL)
5962-96902 02HNX
256K x 16 SRAM Monolithic
20ns
44 lead Flatpack (FL)
5962-96902 03HNX
256K x 16 SRAM Monolithic
17ns
44 lead Flatpack (FL)
5962-96902 04HNX
Microsemi Corporation reserves the right to change products or specifications without notice. May 2013 Rev. 8
© 2013 Microsemi Corporation. All rights reserved.
7
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
Document Title 256Kx16 MONOLITHIC SRAM, SMD 5962-96902
Revision History Rev #
History
Release Date
Status
Rev 7
Changes (Pg. 1-9)
February 2011
Final
May 2013
Final
7.1 Change document layout from White Electronic Designs to Microsemi 7.2 Added document 'Revision History' page Rev 8
Changes (Pg. 1-8) 8.1 Remove all references to the "FG" package
Microsemi Corporation reserves the right to change products or specifications without notice. May 2013 Rev. 8
© 2013 Microsemi Corporation. All rights reserved.
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Microsemi Corporation • (602) 437-1520 • www.microsemi.com
